Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si Substrate

Mols, YvesYvesMolsVais, AbhitoshAbhitoshVaisYadav, SachinSachinYadavWitters, LiesbethLiesbethWittersVondkar Kodandarama, KomalKomalVondkar KodandaramaAlcotte, ReynaldReynaldAlcotteBaryshnikova, MarinaMarinaBaryshnikovaBoccardi, GuillaumeGuillaumeBoccardiWaldron, NiamhNiamhWaldronParvais, BertrandBertrandParvaisCollaert, NadineNadineCollaertLanger, RobertRobertLangerKunert, BernardetteBernardetteKunert2023-01-172022-12-232023-01-172021-09-291996-1944WOS:000708002500001https://imec-publications.be/handle/20.500.12860/40907Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si SubstrateJournal article10.3390/ma14195682WOS:000708002500001Electrical & electronic engineeringHETEROJUNCTION BIPOLAR-TRANSISTORDCnano-ridge engineeringNREMOVPEIII-V on Sihetero epitaxyMEDLINE:34640072