Strain enhanced nMOS using in-situ doped embedded Si:C S/D stressors with up to 1.5% substitutional carbon content grown using a novel deposition process

Verheyen, PeterPeterVerheyenKerner, ChristophChristophKernerClemente, FrancescaFrancescaClementeBender, HugoHugoBenderShamiryan, DenisDenisShamiryanLoo, RogerRogerLooHoffmann, Thomas Y.Thomas Y.HoffmannAbsil, PhilippePhilippeAbsilBiesemans, SergeSergeBiesemansLu, Jiong-PingJiong-PingLuWise, RickRickWiseMachkaoutsan, VladimirVladimirMachkaoutsanBauer, MatthiasMatthiasBauerWeeks, DorianDorianWeeksThomas, ShawnShawnThomas2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/14745Strain enhanced nMOS using in-situ doped embedded Si:C S/D stressors with up to 1.5% substitutional carbon content grown using a novel deposition processProceedings paper