A novel methodology for sensing the breakdown location and its application to the reliability study of ultra-thin Hf-silicate gate dielectrics

Crupi, FeliceFeliceCrupiKauerauf, ThomasThomasKaueraufDegraeve, RobinRobinDegraevePantisano, LuigiLuigiPantisanoGroeseneken, GuidoGuidoGroeseneken2021-10-162021-10-162005-08https://imec-publications.be/handle/20.500.12860/10267A novel methodology for sensing the breakdown location and its application to the reliability study of ultra-thin Hf-silicate gate dielectricsJournal article