Wristers, D.D.WristersWang, HuiHuiWangDe Wolf, IngridIngridDe WolfHan, L. K.L. K.HanKwong, D. L.D. L.KwongFulford, J.J.Fulford2021-09-292021-09-291996https://imec-publications.be/handle/20.500.12860/1665Ultra thin oxide reliability : effects of gate doping concentration and poly-Si.SiO2 interface stress relaxationProceedings paper