Dry-etch Fin patterning on SOI: transition from 32 to 22nm node on a 6T-SRAM cell

Altamirano Sanchez, EfrainEfrainAltamirano SanchezErcken, MoniqueMoniqueErckenVeloso, AnabelaAnabelaVelosoDemand, MarcMarcDemandBoullart, WernerWernerBoullart2021-10-172021-10-172009https://imec-publications.be/handle/20.500.12860/14892Dry-etch Fin patterning on SOI: transition from 32 to 22nm node on a 6T-SRAM cellOral presentation