3D sequential CMOS top tier devices demonstration using a low temperature Smart Cu (TM) Si layer transfer

Besnard, GuillaumeGuillaumeBesnardRadu, IonutIonutRaduVandooren, AnneAnneVandoorenWu, ZhichengZhichengWuFranco, JacopoJacopoFrancoLi, WaikinWaikinLiArimura, HiroakiHiroakiArimuraMannaert, GeertGeertMannaertRosseel, ErikErikRosseelHikavyy, AndriyAndriyHikavyyDentoni Litta, EugenioEugenioDentoni LittaHoriguchi, NaotoNaotoHoriguchi2022-03-162022-03-1620212161-4636WOS:000712433900024https://imec-publications.be/handle/20.500.12860/394473D sequential CMOS top tier devices demonstration using a low temperature Smart Cu (TM) Si layer transferProceedings paper10.1109/SNW51795.2021.00025978-4-86348-781-9WOS:000712433900024