Gate MOSCAP Studies on Electroless Deposited Nickel Boron as Word Line Candidate Metal for Future Scaled 3-D NAND Flash

Ramesh, SivaSivaRameshRachidi, SanaSanaRachidiDonadio, Gabriele LucaGabriele LucaDonadioVan den Bosch, GeertGeertVan den BoschRosmeulen, MaartenMaartenRosmeulen2023-07-072023-05-042023-07-0720232162-8769WOS:000973371600001https://imec-publications.be/handle/20.500.12860/41565Gate MOSCAP Studies on Electroless Deposited Nickel Boron as Word Line Candidate Metal for Future Scaled 3-D NAND FlashJournal article10.1149/2162-8777/accb66WOS:000973371600001IMPACT