Different nature of process-induced and stress-induced defects in thin SiO2 layers

Cellere, G.G.CellereValentini, M.G.M.G.ValentiniPantisano, LuigiLuigiPantisanoCheung, K.P.K.P.CheungPaccagnella, A.A.Paccagnella2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/7299Different nature of process-induced and stress-induced defects in thin SiO2 layersJournal article