Dry etch of Yb-doped poly-Si gates for low Vt FUSI devices

Demand, MarcMarcDemandParaschiv, VasileVasileParaschivShamiryan, DenisDenisShamiryanVrancken, ChristaChristaVranckenBrus, StephanStephanBrusVeloso, AnabelaAnabelaVelosoBoullart, WernerWernerBoullart2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/12042Dry etch of Yb-doped poly-Si gates for low Vt FUSI devicesProceedings paper