High power and linearity performances of gallium nitride HEMT devices on sapphire substrate

Werquin, W.W.WerquinGaquiere, C.C.GaquiereGuhel, Y.Y.GuhelVellas, N.N.VellasTheron, D.D.TheronBoudart, B.B.BoudartHoel, V.V.HoelGermain, MarianneMarianneGermainde Jaeger, J.C.J.C.de JaegerDelage, S.S.Delage2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/11554High power and linearity performances of gallium nitride HEMT devices on sapphire substrateJournal article