In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates

Shimura, Y.Y.ShimuraTakeuchi, ShotaroShotaroTakeuchiNakatsuka, O.O.NakatsukaVincent, BenjaminBenjaminVincentGencarelli, FedericaFedericaGencarelliClarysse, TrudoTrudoClarysseVandervorst, WilfriedWilfriedVandervorstCaymax, MattyMattyCaymaxLoo, RogerRogerLooJensen, A.A.JensenPetersen, D. H.D. H.PetersenZaima, S.S.Zaima2021-10-202021-10-2020120040-6090https://imec-publications.be/handle/20.500.12860/21502In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substratesJournal article