Yu, HongYuHongYuYuSinganamalla, RaghunathRaghunathSinganamallaOpsomer, KarlKarlOpsomerAugendre, EmmanuelEmmanuelAugendreSimoen, EddyEddySimoenKittl, JorgeJorgeKittlKubicek, StefanStefanKubicekSeveri, SimoneSimoneSeveriShi, XiaopingXiaopingShiBrus, StephanStephanBrusZhao, ChaoChaoZhaode Marneffe, Jean-FrancoisJean-Francoisde MarneffeLocorotondo, SabrinaSabrinaLocorotondoShamiryan, DenisDenisShamiryanVan Dal, MarkMarkVan DalVeloso, AnabelaAnabelaVelosoLauwers, AnneAnneLauwersNiwa, MasaakiMasaakiNiwaMaex, KarenKarenMaexDe Meyer, KristinKristinDe MeyerAbsil, PhilippePhilippeAbsilJurczak, GosiaGosiaJurczakBiesemans, SergeSergeBiesemans2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/11598Demonstration of Ni fully GermanoSilicide as a pFET gate electrode candidate on HfSiONProceedings paper