Forksheet FETs for Advanced CMOS Scaling: Forksheet-Nanosheet Co-Integration and Dual Work Function Metal Gates at 17nm N-P Space

Mertens, HansHansMertensRitzenthaler, RomainRomainRitzenthalerOniki, YusukeYusukeOnikiBriggs, BasoeneBasoeneBriggsChan, BTBTChanHikavyy, AndriyAndriyHikavyyHopf, TobyTobyHopfMannaert, GeertGeertMannaertTao, ZhengZhengTaoSebaai, FaridFaridSebaaiPeter, AntonyAntonyPeterVandersmissen, KevinKevinVandersmissenDupuy, EmmanuelEmmanuelDupuyRosseel, ErikErikRosseelBatuk, DmitryDmitryBatukGeypen, JefJefGeypenMartinez Alanis, Gerardo TadeoGerardo TadeoMartinez AlanisAbigail, Daniel_Daniel_AbigailGrieten, EvaEvaGrietenD'have, KoenKoenD'haveMitard, JeromeJeromeMitardSubramanian, SujithSujithSubramanianRagnarsson, Lars-AkeLars-AkeRagnarssonWeckx, PieterPieterWeckxChehab, BilalBilalChehabHellings, GeertGeertHellingsRyckaert, JulienJulienRyckaertDentoni Litta, EugenioEugenioDentoni LittaHoriguchi, NaotoNaotoHoriguchi2021-10-312021-10-312021https://imec-publications.be/handle/20.500.12860/36975Forksheet FETs for Advanced CMOS Scaling: Forksheet-Nanosheet Co-Integration and Dual Work Function Metal Gates at 17nm N-P SpaceProceedings paperhttps://ieeexplore.ieee.org/document/9508730