Impact of Interface Layer on Device Characteristics of Si:HfO2-Based FeFET's

Jung, TaehwanTaehwanJungO'Sullivan, Barry J.Barry J.O'SullivanRonchi, NicoloNicoloRonchiLinten, DimitriDimitriLintenShin, ChanghwanChanghwanShinVan Houdt, JanJanVan Houdt2022-02-032021-11-022022-02-0320211530-4388WOS:000659548400003https://imec-publications.be/handle/20.500.12860/37878Impact of Interface Layer on Device Characteristics of Si:HfO2-Based FeFET'sJournal article10.1109/TDMR.2021.3077876WOS:000659548400003HAFNIUM OXIDEMEMORY WINDOW