Analysis of depth-inhomogeneous strains in deep sub-micron silicon devices by TEM/CBED

Spessot, A.A.SpessotArmigliato, A.A.ArmigliatoBalboni, R.R.BalboniFrabboni, S.S.FrabboniBenedetti, AlessandroAlessandroBenedetti2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/11259Analysis of depth-inhomogeneous strains in deep sub-micron silicon devices by TEM/CBEDProceedings paper