Correlation between grown-in silicon substrate defects and silicon gate oxide breakdown characteristics

Vanhellemont, JanJanVanhellemontKissinger, G.G.KissingerKenis, KarineKarineKenisDepas, MichelMichelDepasGräf, D.D.GräfLambert, U.U.LambertWagner, P.P.Wagner2021-09-292021-09-291996https://imec-publications.be/handle/20.500.12860/1612Correlation between grown-in silicon substrate defects and silicon gate oxide breakdown characteristicsMeeting abstract