Impact of Ge content and recess depth on the leakage current in strained Si1-xGex/Si heterojunctions

Luque Rodriguez, AbrahamAbrahamLuque RodriguezBargallo Gonzalez, MireiaMireiaBargallo GonzalezEneman, GeertGeertEnemanClaeys, CorCorClaeysKobayashi, DaisukeDaisukeKobayashiSimoen, EddyEddySimoenJiménez Tejada, Juan A.Juan A.Jiménez Tejada2021-10-192021-10-1920110018-9383https://imec-publications.be/handle/20.500.12860/19347Impact of Ge content and recess depth on the leakage current in strained Si1-xGex/Si heterojunctionsJournal article