Analysis of temperature-induced saturation threshold voltage degradation in deep-submicron ultrathin SOI MOSFETs

Pavanello, M.A.M.A.PavanelloMartino, J.A.J.A.MartinoSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/11006Analysis of temperature-induced saturation threshold voltage degradation in deep-submicron ultrathin SOI MOSFETsJournal article