Gate-All-Around nanosheet field-effect transistors for advanced logic and memory applications: integration and device features

Veloso, AnabelaAnabelaVelosoMatagne, PhilippePhilippeMatagneEneman, GeertGeertEnemanMertens, HansHansMertensVaisman Chasin, AdrianAdrianVaisman ChasinSimoen, EddyEddySimoenHoriguchi, NaotoNaotoHoriguchi2021-10-292021-10-292020https://imec-publications.be/handle/20.500.12860/36231Gate-All-Around nanosheet field-effect transistors for advanced logic and memory applications: integration and device featuresMeeting abstracthttps://doi.org/10.1149/MA2020-01151037mtgabs