Time dependent dielectric breakdown and stress induced leakage current characteristics of 8 Å EOT HfO2 n-MOSFETs

O'Connor, RobertRobertO'ConnorKauerauf, ThomasThomasKaueraufRagnarsson, Lars-AkeLars-AkeRagnarssonHughes, GregGregHughes2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/17722Time dependent dielectric breakdown and stress induced leakage current characteristics of 8 Å EOT HfO2 n-MOSFETsProceedings paper