Physical and electrical properties of reactive molecular-beam-deposited aluminum nitride in metal-oxide-silicon structures

Ragnarsson, Lars-AkeLars-AkeRagnarssonBojarczuk, N.A.N.A.BojarczukCopel, M.M.CopelGusev, E.P.E.P.GusevKarasinski, J.J.KarasinskiGuha, S.S.Guha2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/8056Physical and electrical properties of reactive molecular-beam-deposited aluminum nitride in metal-oxide-silicon structuresJournal article