First–principles parameter–free modeling of n– and p–FET hot

Jech, MarkusMarkusJechTyaginov, StanislavStanislavTyaginovKaczer, BenBenKaczerFranco, JacopoJacopoFrancoJabs, DominicDominicJabsJungemann, ChristophChristophJungemannWaltl, MichaelMichaelWaltlGrasser, TiborTiborGrasser2021-10-272021-10-272019https://imec-publications.be/handle/20.500.12860/33221First–principles parameter–free modeling of n– and p–FET hot–carrier degradationProceedings paperhttps://ieeexplore.ieee.org/document/8993630