Total-ionizing-dose effects and low-frequency noise in 30-nm gate-length Bulk and SOI FinFETs with SiO2/HfO2 gate delectrics

Gorchichko, M.M.GorchichkoCao, Y.Y.CaoZhang, E.X.E.X.ZhangYan, D.D.YanGong, H.H.GongZhao, S.E.S.E.ZhaoWang, P.P.WangJiang, R.R.JiangLiang, C.C.LiangFleedwood, D.M.D.M.FleedwoodSchrimpf, R.D.R.D.SchrimpfReed, R.A.R.A.ReedLinten, DimitriDimitriLinten2021-10-282021-10-2820200018-9499https://imec-publications.be/handle/20.500.12860/35191Total-ionizing-dose effects and low-frequency noise in 30-nm gate-length Bulk and SOI FinFETs with SiO2/HfO2 gate delectricsJournal articlehttps://ieeexplore.ieee.org/document/8937016