Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Wu, Tian-LiTian-LiWuMarcon, DenisDenisMarconBakeroot, BenoitBenoitBakerootDe Jaeger, BriceBriceDe JaegerLin, DennisDennisLinFranco, JacopoJacopoFrancoStoffels, SteveSteveStoffelsVan Hove, MarleenMarleenVan HoveGroeseneken, GuidoGuidoGroesenekenDecoutere, StefaanStefaanDecoutere2021-10-232021-10-2320150003-6951https://imec-publications.be/handle/20.500.12860/26191Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistorsJournal articlehttp://scitation.aip.org/content/aip/journal/apl/107/9/10.1063/1.4930076