NIR sensors based on photolithographically patterned PbS QD photodiodes for CMOS integration

Georgitzikis, EpimitheasEpimitheasGeorgitzikisMalinowski, PawelPawelMalinowskiMoreno Hagelsieb, LuisLuisMoreno HagelsiebPejovic, VladimirVladimirPejovicUytterhoeven, GrietGrietUytterhoevenGuerrieri, StefanoStefanoGuerrieriSuss, AndreasAndreasSussCavaco, CelsoCelsoCavacoChatzinis, KonstantinosKonstantinosChatzinisMaes, JorickJorickMaesHens, ZegerZegerHensHeremans, PaulPaulHeremansCheyns, DavidDavidCheyns2021-10-252021-10-252018https://imec-publications.be/handle/20.500.12860/30761NIR sensors based on photolithographically patterned PbS QD photodiodes for CMOS integrationProceedings paperhttps://ieeexplore.ieee.org/document/8589515