Selective area growth of InP in shallow trench isolation (STI) on large scale Si(001) wafer using defect confinement technique

Merckling, ClementClementMercklingWaldron, NiamhNiamhWaldronJiang, SijiaSijiaJiangGuo, WeimingWeimingGuoRichard, OlivierOlivierRichardDouhard, BastienBastienDouhardMoussa, AlainAlainMoussaVanhaeren, DanielleDanielleVanhaerenBender, HugoHugoBenderCollaert, NadineNadineCollaertHeyns, MarcMarcHeynsThean, AaronAaronTheanCaymax, MattyMattyCaymaxVandervorst, WilfriedWilfriedVandervorst2021-10-212021-10-2120130021-8979https://imec-publications.be/handle/20.500.12860/22801Selective area growth of InP in shallow trench isolation (STI) on large scale Si(001) wafer using defect confinement techniqueJournal article