Scaling of Hf-based gate dielectrics - integration with polysilicon gates

De Gendt, StefanStefanDe GendtCaymax, MattyMattyCaymaxChen, JerryJerryChenClaes, MartineMartineClaesConard, ThierryThierryConardDelabie, AnneliesAnneliesDelabieDeweerd, WimWimDeweerdKaushik, VidyaVidyaKaushikKerber, AndreasAndreasKerberKubicek, StefanStefanKubicekNiwa, MasaakiMasaakiNiwaPantisano, LuigiLuigiPantisanoPuurunen, RiikkaRiikkaPuurunenRagnarsson, Lars-AkeLars-AkeRagnarssonSchram, TomTomSchramShimamoto, YasuhiroYasuhiroShimamotoTsai, WilmanWilmanTsaiRöhr, ErikaErikaRöhrVan Elshocht, SvenSvenVan ElshochtWitters, ThomasThomasWittersYoung, EdwardEdwardYoungZhao, ChaoChaoZhaoHeyns, MarcMarcHeyns2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/7404Scaling of Hf-based gate dielectrics - integration with polysilicon gatesMeeting abstract