Tailoring switching and endurance / retention reliability characteristics of HfO2 / Hf RRAM with Ti, Al, Si dopants

Chen, YangyinYangyinChenRoelofs, RobinRobinRoelofsRedolfi, AugustoAugustoRedolfiDegraeve, RobinRobinDegraeveCrotti, DavideDavideCrottiFantini, AndreaAndreaFantiniClima, SergiuSergiuClimaGovoreanu, BogdanBogdanGovoreanuKomura, MasanoriMasanoriKomuraGoux, LudovicLudovicGouxZhang, LeqiLeqiZhangBelmonte, AttilioAttilioBelmonteXie, QiQiXieMaes, JanJanMaesPourtois, GeoffreyGeoffreyPourtoisJurczak, GosiaGosiaJurczak2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/23635Tailoring switching and endurance / retention reliability characteristics of HfO2 / Hf RRAM with Ti, Al, Si dopantsProceedings paperhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6894403&contentType=Conference+Publications