Jiang, SijiaSijiaJiangMerckling, ClementClementMercklingGuo, WeimingWeimingGuoWaldron, NiamhNiamhWaldronMoussa, AlainAlainMoussaCaymax, MattyMattyCaymaxVandervorst, WilfriedWilfriedVandervorstSeefeldt, MarcMarcSeefeldtHeyns, MarcMarcHeyns2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/24011Influence of trench width on III-V nucleation during InP selective area growth on pattern Si(001) substrateMeeting abstract