On the beneficial impact of tensile-strained silicon substrates on the low-frequency noise of n-channel metal-oxide-semiconductor transistors

Simoen, EddyEddySimoenEneman, GeertGeertEnemanVerheyen, PeterPeterVerheyenDelhougne, RomainRomainDelhougneLoo, RogerRogerLooDe Meyer, KristinKristinDe MeyerClaeys, CorCorClaeys2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/11209On the beneficial impact of tensile-strained silicon substrates on the low-frequency noise of n-channel metal-oxide-semiconductor transistorsJournal article