Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC source/drain

Amat, E.E.AmatRodriguez, R.R.RodriguezGonzalez, MarioMarioGonzalezMartin-Martinez, J.J.Martin-MartinezNafria, M.M.NafriaAymerich, X.X.AymerichMachkaoutsan, VladimirVladimirMachkaoutsanBauer, M.M.BauerVerheyen, PeterPeterVerheyenSimoen, EddyEddySimoen2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/16648Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC source/drainProceedings paper