W vs. Co-Al as gate fill-metal for aggressively scaled replacement high-k/metal gate devices for (Sub-)22nm technology nodes

Veloso, AnabelaAnabelaVelosoChew, Soon AikSoon AikChewSchram, TomTomSchramDekkers, HaroldHaroldDekkersVan Ammel, AnnemieAnnemieVan AmmelWitters, ThomasThomasWittersTielens, HildeHildeTielensHeylen, NancyNancyHeylenDevriendt, KatiaKatiaDevriendtSebaai, FaridFaridSebaaiBrus, StephanStephanBrusRagnarsson, Lars-AkeLars-AkeRagnarssonPantisano, LuigiLuigiPantisanoEneman, GeertGeertEnemanCarbonell, LaureLaureCarbonellRichard, OlivierOlivierRichardFavia, PaolaPaolaFaviaGeypen, JefJefGeypenBender, HugoHugoBenderHiguchi, YuichiYuichiHiguchiPhatak, AnupAnupPhatakThean, AaronAaronTheanHoriguchi, NaotoNaotoHoriguchi2021-10-202021-10-202012-09https://imec-publications.be/handle/20.500.12860/21765W vs. Co-Al as gate fill-metal for aggressively scaled replacement high-k/metal gate devices for (Sub-)22nm technology nodesProceedings paper