GIDL behavior with different TiN metal gate thickness and high-k gate dielectric on MuGFET devices

Galeti, M.M.GaletiRodrigues, M.M.RodriguesMartino, J.A.J.A.MartinoCollaert, NadineNadineCollaertSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-192021-10-192011https://imec-publications.be/handle/20.500.12860/18941GIDL behavior with different TiN metal gate thickness and high-k gate dielectric on MuGFET devicesProceedings paper