MOCVD growth and characterization of 200 V E-mode p-GaN HEMTs on 200 mm GaN-on-SOI for monolithic integration

Zhao, MingMingZhaoGeens, KarenKarenGeensLi, XiangdongXiangdongLiVan Hove, MarleenMarleenVan HoveLempinen, Vesa-PekkaVesa-PekkaLempinenSormunen, JaakkoJaakkoSormunenLanger, RobertRobertLangerDecoutere, StefaanStefaanDecoutere2021-10-242021-10-242017https://imec-publications.be/handle/20.500.12860/30026MOCVD growth and characterization of 200 V E-mode p-GaN HEMTs on 200 mm GaN-on-SOI for monolithic integrationMeeting abstract