The optimization of the cleaning process to remove residual bonds of SiC and Si-F after fluorocarbon plasma etch on the silicon surface

Kim, Young-ChangYoung-ChangKimBaklanov, MikhaïlMikhaïlBaklanovConard, ThierryThierryConardVanhaelemeersch, SergeSergeVanhaelemeerschVandervorst, WilfriedWilfriedVandervorst2021-10-062021-10-061999https://imec-publications.be/handle/20.500.12860/3556The optimization of the cleaning process to remove residual bonds of SiC and Si-F after fluorocarbon plasma etch on the silicon surfaceProceedings paper