Highly scalable effective work function engineering approach for multi-VT modulation of planar and FinFET-based RMG high-k last devies for (sub-)22nm nodes

Veloso, AnabelaAnabelaVelosoBoccardi, GuillaumeGuillaumeBoccardiRagnarsson, Lars-AkeLars-AkeRagnarssonHiguchi, YuichiYuichiHiguchiLee, Jae WonJae WonLeeSimoen, EddyEddySimoenRoussel, PhilippePhilippeRousselCho, Moon JuMoon JuChoChew, Soon AikSoon AikChewSchram, TomTomSchramDekkers, HaroldHaroldDekkersVan Ammel, AnnemieAnnemieVan AmmelWitters, ThomasThomasWittersBrus, StephanStephanBrusDangol, AnishAnishDangolParaschiv, VasileVasileParaschivVecchio, EmmaEmmaVecchioShi, XiaopingXiaopingShiSebaai, FaridFaridSebaaiKellens, KristofKristofKellensHeylen, NancyNancyHeylenDevriendt, KatiaKatiaDevriendtRichard, OlivierOlivierRichardBender, HugoHugoBenderChiarella, ThomasThomasChiarellaArimura, HiroakiHiroakiArimuraThean, AaronAaronTheanHoriguchi, NaotoNaotoHoriguchi2021-10-212021-10-212013https://imec-publications.be/handle/20.500.12860/23314Highly scalable effective work function engineering approach for multi-VT modulation of planar and FinFET-based RMG high-k last devies for (sub-)22nm nodesProceedings paperhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6576649&queryText%3DHighly+scalable+Effective+Work+Function+engin