Park, SehoonSehoonParkZhang, YangYangZhangHemelhof, ArnoArnoHemelhofVaesen, KristofKristofVaesenIngels, MarkMarkIngelsWambacq, PietPietWambacq2026-05-282026-05-2820260013-5194https://imec-publications.be/handle/20.500.12860/59456A D-band ultra-low-power and broadband two-stage, gain-boosted low-noise amplifier (LNA) in a 250-nm InP DHBT process is presented. The LNA adopts a simultaneous noise and input matching technique, minimizing loss at the input while boosting the gain over a broad frequency range. The gain boosting core uses a feedback network based on a long transmission line between the base and collector and feedback at the emitter to satisfy the gain, stability and bandwidth requirements at once. The LNA achieves 6.2 dB noise figure, 27 dB gain between 130 and 155 GHz while consuming only 2.5 mW DC power.engJournal article10.1049/ell2.70517WOS:00170368910000165-NM CMOSHIGH-GAINAMPLIFIERS