MOCVD growth and characterizations of unintentionally and intentionally C doped GaN on 200 mm Si (111)

Zhao, MingMingZhaoPriesol, JurajJurajPriesolSatka, AlexanderAlexanderSatkaJanicki, LukaszLukaszJanickiBaranowski, MichalMichalBaranowskiMisiewicz, JanJanMisiewiczKudrawiec, RobertRobertKudrawiecSaripalli, YogaYogaSaripalli2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/27667MOCVD growth and characterizations of unintentionally and intentionally C doped GaN on 200 mm Si (111)Meeting abstracthttp://www.mrs.org/icmovpe-xviii-program-pdf/