Electronic properties of (100)Ge/Ge(Hf)O-2 interfaces: A first-principles study

Houssa, MichelMichelHoussaPourtois, GeoffreyGeoffreyPourtoisCaymax, MattyMattyCaymaxMeuris, MarcMarcMeurisHeyns, MarcMarcHeyns2021-10-172021-10-1720080039-6028https://imec-publications.be/handle/20.500.12860/13895Electronic properties of (100)Ge/Ge(Hf)O-2 interfaces: A first-principles studyJournal article