A novel silicon heterojunction IBC process flow using partial etching of doped a-Si:H to switch from hole contact to electron contact in situ with efficiencies close to 23%

Sivaramakrishnan Radhakrishnan, HariharsudanHariharsudanSivaramakrishnan RadhakrishnanUddin, MD GiusMD GiusUddinXu, MengleiMengleiXuCho, JinyounJinyounChoGhannam, MoustafaMoustafaGhannamGordon, IvanIvanGordonSzlufcik, JozefJozefSzlufcikPoortmans, JefJefPoortmans2021-10-272021-10-2720191062-7995https://imec-publications.be/handle/20.500.12860/34023A novel silicon heterojunction IBC process flow using partial etching of doped a-Si:H to switch from hole contact to electron contact in situ with efficiencies close to 23%Journal articlehttps://doi.org/10.1002/pip.3101