Achieving Low-VT Ni-FUSI CMOS by ultra-thin Dy2O3 capping of hafnium silicate dielectrics

Veloso, AnabelaAnabelaVelosoYu, HongYuHongYuYuChang, S.Z.S.Z.ChangAdelmann, ChrisChrisAdelmannOnsia, BartBartOnsiaBrus, StephanStephanBrus2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/13158Achieving Low-VT Ni-FUSI CMOS by ultra-thin Dy2O3 capping of hafnium silicate dielectricsJournal article