Eneman, GeertGeertEnemanDe Keersgieter, AnAnDe KeersgieterWitters, LiesbethLiesbethWittersMitard, JeromeJeromeMitardVincent, BenjaminBenjaminVincentHikavyy, AndriyAndriyHikavyyLoo, RogerRogerLooHoriguchi, NaotoNaotoHoriguchiCollaert, NadineNadineCollaertThean, AaronAaronThean2021-10-202021-10-202012https://imec-publications.be/handle/20.500.12860/20653SiGe or GeSn source/drain stressors on strained SiGe-channel pFETS: a TCAD studyProceedings paper