GIDL behavior of p- and n-MuGFET devices with different TiN metal gate thickness and high-k gate dielectrics

Galeti, M.M.GaletiRodrigues, M.M.RodriguesMartino, J.A.J.A.MartinoCollaert, NadineNadineCollaertSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-202021-10-2020120038-1101https://imec-publications.be/handle/20.500.12860/20702GIDL behavior of p- and n-MuGFET devices with different TiN metal gate thickness and high-k gate dielectricsJournal article