Ultralow-resistivity CMOS contact scheme with pre-contact amorphization plus Ti (germano-)silicidation

Yu, HaoHaoYuSchaekers, MarcMarcSchaekersHikavyy, AndriyAndriyHikavyyRosseel, ErikErikRosseelPeter, AntonyAntonyPeterHollar, K.K.HollarKhaja, FareenFareenKhajaAderhold, W.W.AderholdDate, LucienLucienDateMayur, A.J.A.J.MayurLee, J.G.J.G.LeeShin, Keo MyoungKeo MyoungShinDouhard, BastienBastienDouhardChew, Soon AikSoon AikChewDemuynck, StevenStevenDemuynckKubicek, StefanStefanKubicekKim, DaeyongDaeyongKimMocuta, AndaAndaMocutaBarla, KathyKathyBarlaHoriguchi, NaotoNaotoHoriguchiCollaert, NadineNadineCollaertThean, AaronAaronTheanDe Meyer, KristinKristinDe Meyer2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/27640Ultralow-resistivity CMOS contact scheme with pre-contact amorphization plus Ti (germano-)silicidationProceedings paperhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=7573381