Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks

Maldonado, D.D.MaldonadoRoldan, J. B.J. B.RoldanRoldan, A. M.A. M.RoldanJimenez-Molinos, F.F.Jimenez-MolinosHui, F.F.HuiJing, XuXuJingWen, C.C.WenLanza, M.M.LanzaShi, YuanyuanYuanyuanShi2021-11-242021-11-022021-11-2420201541-7026WOS:000612717200028https://imec-publications.be/handle/20.500.12860/38226Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacksProceedings paper978-1-7281-3199-3WOS:000612717200028