Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation

Merckling, ClementClementMercklingChang, Y.C.Y.C.ChangLu, C.Y.C.Y.LuPenaud, J.J.PenaudBrammertz, GuyGuyBrammertzScarrozza, MarcoMarcoScarrozzaPourtois, GeoffreyGeoffreyPourtoisKwo, J.J.KwoHong, M.M.HongDekoster, JohanJohanDekosterMeuris, MarcMarcMeurisHeyns, MarcMarcHeynsCaymax, MattyMattyCaymax2021-10-192021-10-1920110039-6028https://imec-publications.be/handle/20.500.12860/19417Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivationJournal article