Maximization of active As doping (selective) epitaxial Si and SiGe layers

Loo, RogerRogerLooBajolet, PhilippePhilippeBajoletBauer, MatthiasMatthiasBauerMaes, Jan-WillemJan-WillemMaesCaymax, MattyMattyCaymaxArena, ChantalChantalArena2021-10-152021-10-152004-10https://imec-publications.be/handle/20.500.12860/9217Maximization of active As doping (selective) epitaxial Si and SiGe layersProceedings paper