Forksheet FETs with Bottom Dielectric Isolation, Self-Aligned Gate Cut, and Isolation between Adjacent Source-Drain Structures

Mertens, HansHansMertensRitzenthaler, RomainRomainRitzenthalerOniki, YusukeYusukeOnikiPuttarame Gowda, PallaviPallaviPuttarame GowdaMannaert, GeertGeertMannaertSebaai, FaridFaridSebaaiHikavyy, AndriyAndriyHikavyyRosseel, ErikErikRosseelDupuy, EmmanuelEmmanuelDupuyPeter, AntonyAntonyPeterVandersmissen, KevinKevinVandersmissenRadisic, DunjaDunjaRadisicBriggs, BasoeneBasoeneBriggsBatuk, DmitryDmitryBatukGeypen, JefJefGeypenMartinez Alanis, Gerardo TadeoGerardo TadeoMartinez AlanisSeidel, FelixFelixSeidelRichard, OlivierOlivierRichardChan, BTBTChanMitard, JeromeJeromeMitardDentoni Litta, EugenioEugenioDentoni LittaHoriguchi, NaotoNaotoHoriguchi2023-06-012023-05-252023-06-0120222380-9248WOS:000968800700153https://imec-publications.be/handle/20.500.12860/41619Forksheet FETs with Bottom Dielectric Isolation, Self-Aligned Gate Cut, and Isolation between Adjacent Source-Drain StructuresProceedings paper10.1109/IEDM45625.2022.10019497978-1-6654-8959-1WOS:000968800700153