Integration of SiGe in the p-MOS fin based FETs

Hikavyy, AndriyAndriyHikavyyRosseel, ErikErikRosseelKubicek, StefanStefanKubicekMannaert, GeertGeertMannaertFavia, PaolaPaolaFaviaBender, HugoHugoBenderLoo, RogerRogerLooHoriguchi, NaotoNaotoHoriguchi2021-10-222021-10-222015-05https://imec-publications.be/handle/20.500.12860/25386Integration of SiGe in the p-MOS fin based FETsProceedings paper