Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes

Baert, BrunoBrunoBaertGupta, SomyaSomyaGuptaGencarelli, FedericaFedericaGencarelliLoo, RogerRogerLooSimoen, EddyEddySimoenNguyen, DuyDuyNguyen2021-10-222021-10-2220150038-1101https://imec-publications.be/handle/20.500.12860/24948Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimesJournal articlehttp://dx.doi.org/10.1016/j.sse.2015.01.007